Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD, PROGRAM AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/179038
Kind Code:
A1
Abstract:
Provided is a technique whereby, in a semiconductor device production step, when a film formed on an inner surface of a recessed structure having a high aspect ratio is modified from the film surface to form a modified layer, the modification is performed in such a manner that the thickness of the modified layer in the depth direction of the recessed structure exhibits an intended distribution to raise the electric characteristics of the device. The invention comprises the step of exciting a processing gas containing an oxygen-containing gas and a hydrogen-containing gas to generate an oxygen active species and a hydrogen active species, and the step of supplying the oxygen active species and the hydrogen active species to a substrate having formed therein the recessed structure, to oxidize the film formed on the inner surface of the recessed structure, from the surface thereof, to form an oxidized layer. In the step of forming the oxidized layer, the oxidized layer is formed such that the thickness on the inner surface of the recessed structure becomes greater than the thickness in the top end portion thereof by setting the ratio of the hydrogen active species in the total flow rate of the oxygen active species and the hydrogen active species supplied to the substrate to a predetermined ratio that is greater than a first ratio at which the speed of oxidized layer formation in the top end portion of the recessed structure is maximum.
Inventors:
TAKESHIMA YUICHIRO (JP)
NAKAYAMA MASANORI (JP)
FUNAKI KATSUNORI (JP)
TSUBOTA YASUTOSHI (JP)
IGAWA HIROTO (JP)
NAKAYAMA MASANORI (JP)
FUNAKI KATSUNORI (JP)
TSUBOTA YASUTOSHI (JP)
IGAWA HIROTO (JP)
Application Number:
PCT/JP2017/012314
Publication Date:
October 04, 2018
Filing Date:
March 27, 2017
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/316; H01L21/3065; H01L21/31; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| WO2008041601A1 | 2008-04-10 |
Foreign References:
| JP2012516577A | 2012-07-19 | |||
| JP2009200483A | 2009-09-03 | |||
| JP2008251855A | 2008-10-16 | |||
| JP2002280369A | 2002-09-27 | |||
| JP2012216667A | 2012-11-08 |
Attorney, Agent or Firm:
PATENT PROFESSIONAL CORPORATION IPWIN (JP)
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