Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/168314
Kind Code:
A1
Abstract:
A semiconductor device production method including, in order: a first step in which a semiconductor element having a pn junction-exposed section is prepared; a second step in which an insulation layer is formed so as to cover the pn junction-exposed section; and a third step in which a layer comprising a glass composition for semiconductor junction protection is formed upon the insulation layer, and then a glass layer is formed upon the insulation layer by sintering the layer comprising the glass composition for semiconductor junction protection. The glass composition for semiconductor junction protection comprises glass fine particles prepared from a melt obtained by melting a raw material containing at least two alkali earth metal oxides from among at least SiO2, Al2O3, B2O3, ZnO, CaO, MgO, and BaO, and not substantially containing Pb, As, Sb, Li, Na, or K. In addition none of the raw material components are included as fillers. As a result, a semiconductor device having high pressure resistance similar to conventional semiconductor devices can be obtained using a glass material not including lead.
More Like This:
Inventors:
OGASAWARA ATSUSHI (JP)
ITO KOJI (JP)
ITO KAZUHIKO (JP)
MUYARI KOYA (JP)
ITO KOJI (JP)
ITO KAZUHIKO (JP)
MUYARI KOYA (JP)
Application Number:
PCT/JP2012/080795
Publication Date:
November 14, 2013
Filing Date:
November 28, 2012
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L21/316; C03C3/093; H01L29/74; H01L29/78; H01L29/861; H01L29/868
Foreign References:
| JPS5526656A | 1980-02-26 | |||
| JPS57202742A | 1982-12-11 | |||
| JPH01186629A | 1989-07-26 | |||
| JPH02163938A | 1990-06-25 | |||
| JPS5393783A | 1978-08-17 | |||
| JPS5240071A | 1977-03-28 | |||
| JP2005298259A | 2005-10-27 | |||
| JP2005525287A | 2005-08-25 |
Attorney, Agent or Firm:
MATSUO, NOBUTAKA (JP)
Masatake Matsuo (JP)
Masatake Matsuo (JP)
Download PDF: