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Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/008860
Kind Code:
A1
Abstract:
This invention achieves a semiconductor device wherein formation of a defective joint between a copper electrode and a copper wire can be prevented in the process of forming said joint. This semiconductor device comprises: a semiconductor substrate (1); a copper electrode layer (2) formed over the semiconductor substrate (1); a thin metal film layer (3) formed on top of the copper electrode layer (2), having an opening section (31) on an inner side than the outer periphery for exposing the copper electrode layer (2), and preventing oxidization of the copper electrode layer (2); and a wiring member (4) containing copper as the main component, having a joining region (20) covering the opening section (31), and joined to the thin metal film layer (3) and to the copper electrode layer (2) through the opening section (31).

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Inventors:
SATO YUJI (JP)
URAJI TSUYOSHI (JP)
FUJITA JUN (JP)
YOSHIDA MOTORU (JP)
Application Number:
PCT/JP2018/015333
Publication Date:
January 10, 2019
Filing Date:
April 12, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/60; H01L21/3205; H01L21/768; H01L23/48; H01L23/522; H01L29/78
Foreign References:
US20100181675A12010-07-22
JP2014022692A2014-02-03
JP2003503852A2003-01-28
JPH0474432A1992-03-09
JP2016025107A2016-02-08
JP2005302941A2005-10-27
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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