Title:
SEMICONDUCTOR DEVICE AND VIBRATION SUPPRESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/012122
Kind Code:
A1
Abstract:
The present invention suppresses a high frequency noise that is generated in a semiconductor device wherein a SiC element is mounted. A semiconductor device 100 is provided with: semiconductor elements 14a and 15a, which are connected in series; a SiC diode element 14b connected in parallel to the semiconductor element 14a; and a vibration suppressing circuit 20, which is connected in parallel to the semiconductor element 14a and the SiC diode element 14b, and which suppresses voltage fluctuation that occurs in the SiC diode element 14b corresponding to turning-on of the semiconductor element 15a. The voltage fluctuation that occurs in the SiC diode element 14b corresponding to the turning-on of the semiconductor element 15a is suppressed by means of the vibration suppressing circuit 20, and reliability of the semiconductor device 100 is improved.
Inventors:
MATSUDA NAOTAKA (JP)
IGARASHI SEIKI (JP)
KAKIKI HIDEAKI (JP)
IWAMOTO SUSUMU (JP)
IGARASHI SEIKI (JP)
KAKIKI HIDEAKI (JP)
IWAMOTO SUSUMU (JP)
Application Number:
PCT/JP2017/019365
Publication Date:
January 18, 2018
Filing Date:
May 24, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H02M1/34; H01L25/07; H01L25/18; H02M1/00; H02M7/48; H03K17/16
Domestic Patent References:
| WO2013132827A1 | 2013-09-12 |
Foreign References:
| JP2009159184A | 2009-07-16 | |||
| JPS6091867A | 1985-05-23 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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