Title:
SEMICONDUCTOR DEVICE WITH HYBRID CHANNEL CONFIGURATION
Document Type and Number:
WIPO Patent Application WO/2018/033034
Kind Code:
A1
Abstract:
A semiconductor device (100) as described herein includes a substrate (111), a drift layer (112) formed onto the substrate (111), a trench formed into the drift layer (112) at a first surface of the drift layer (112) opposite the substrate (111), wherein the trench extends into the drift layer (112) to a trench depth and defines respective sidewalls of a mesa region orthogonal to the first surface of the drift layer (112), respective planar body regions (113) positioned in the drift layer (112) at the trench surface, respective planar source regions (114) positioned in the drift layer (112) at the trench surface and encapsulated by the respective planar body regions (113), respective mesa body regions (103) positioned in the mesa structure at the first surface of the drift layer (112), and respective mesa source regions (104) positioned in the mesa structure at the first surface of the drift layer (112) and encapsulated by the respective mesa body regions (103).
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Inventors:
CHEN JING (CN)
WEI JIN (CN)
WEI JIN (CN)
Application Number:
PCT/CN2017/097326
Publication Date:
February 22, 2018
Filing Date:
August 14, 2017
Export Citation:
Assignee:
UNIV HONG KONG SCI & TECH (CN)
International Classes:
H01L29/78; H01L21/336; H01L29/76
Foreign References:
| CN101540338A | 2009-09-23 | |||
| CN105206668A | 2015-12-30 | |||
| US8643102B2 | 2014-02-04 | |||
| CN104769723A | 2015-07-08 | |||
| US5691215A | 1997-11-25 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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