Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/039286
Kind Code:
A1
Abstract:
The present invention reduces switching loss when an IGBT is turned off. This semiconductor device 1 is provided with an IGBT 10, a photovoltaic power generation circuit 20 that is connected between the drift region of the IGBT 10 and an emitter electrode 10E or ground G and is for discharging carriers accumulated in the drift region, and a light emission circuit 30 that irradiates light onto the photovoltaic power generation circuit 20 when the IGBT 10 is turned off.
Inventors:
KAJIYAMA KOICHI (JP)
MIZUMURA MICHINOBU (JP)
OGAWA YOSHINORI (JP)
MIZUMURA MICHINOBU (JP)
OGAWA YOSHINORI (JP)
Application Number:
PCT/JP2015/075315
Publication Date:
March 17, 2016
Filing Date:
September 07, 2015
Export Citation:
Assignee:
V TECHNOLOGY CO LTD (JP)
International Classes:
H03K17/04; H01L29/739; H01L29/78; H02M1/08; H03K17/56
Foreign References:
| JP2000299634A | 2000-10-24 | |||
| JP2014146629A | 2014-08-14 |
Attorney, Agent or Firm:
EICHI Patent & Trademark Corp. et al. (JP)
Patent business corporation Wisdom international patent firm (JP)
Patent business corporation Wisdom international patent firm (JP)
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