Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/077578
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device having a structure enabling high-speed operations. The problem is solved by a semiconductor device characterized by having: a planar interconnecting wiring layer formed on a substrate, said interconnecting wiring layer being formed of a semiconductor; a first columnar semiconductor layer formed on the interconnecting wiring layer; a compound layer formed on the whole interconnecting wiring layer upper surface excluding a bottom portion of the first columnar semiconductor layer, said compound layer being formed of a semiconductor and a metal; a first gate insulating film surrounding the first columnar semiconductor layer; a first gate electrode surrounding the first gate insulating film; and first gate wiring connected to the first gate electrode.
Inventors:
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
HARADA NOZOMU (JP)
NAKAMURA HIROKI (JP)
HARADA NOZOMU (JP)
Application Number:
PCT/JP2015/080952
Publication Date:
May 11, 2017
Filing Date:
November 02, 2015
Export Citation:
Assignee:
UNISANTIS ELECT SINGAPORE PTE (SG)
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
HARADA NOZOMU (JP)
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
HARADA NOZOMU (JP)
International Classes:
H01L21/336; H01L29/78
Foreign References:
JP2010272874A | 2010-12-02 | |||
JP2011108702A | 2011-06-02 |
Attorney, Agent or Firm:
NISHIJIMA Takaki et al. (JP)
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