Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/055693
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a semiconductor layer of silicon carbide with a primary surface on which multiple layers are arranged; an electrode layer which is one of the aforementioned multiple layers, is constituted mainly of silver, and has an electrode connection surface to which a conductive connection member is connected; and a first metal layer which is one of the aforementioned multiple layers other than the aforementioned electrode layer, is constituted mainly of titanium carbide, and has a first bonding surface bonded to the electrode layer such that the electrode connection surface is externally exposed, and a second bonding surface electrically connected to the semiconductor layer.
Inventors:
FUKUDA YUSUKE (JP)
Application Number:
PCT/JP2016/077826
Publication Date:
March 29, 2018
Filing Date:
September 21, 2016
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L21/28
Foreign References:
| JP2016115700A | 2016-06-23 | |||
| JP2014236043A | 2014-12-15 | |||
| JP2014082367A | 2014-05-08 | |||
| JP2013125922A | 2013-06-24 |
Other References:
See also references of EP 3518277A4
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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