Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/083890
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a first semiconductor chip (32) wherein an IGBT is formed; a second semiconductor chip (33) wherein an MOSFET connected in parallel to the IGBT is formed; a first metal member (34) electrically connected to a collector electrode and a drain electrode; and a second metal member (38) electrically connected to an emitter electrode and a source electrode. The IGBT and the MOSFET connected in parallel to each other are turned on in the order of the IGBT and the MOSFET, and are turned off in the order of the MOSFET and the IGBT. The second metal member has: a main body section (380), on which the first and second semiconductor chips are mounted; and joint sections (381, 382) as terminal sections connected to the main body section. In planar view from the Z direction, the shortest distance between the joint sections and the first semiconductor chip is shorter than the shortest distance between the joint sections and the second semiconductor chip.
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Inventors:
NAGASE TAKUO (JP)
Application Number:
PCT/JP2017/033183
Publication Date:
May 11, 2018
Filing Date:
September 14, 2017
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L25/07; H01L25/18; H02M1/08
Foreign References:
| JP2014041852A | 2014-03-06 | |||
| JP2015149508A | 2015-08-20 | |||
| JP2008186890A | 2008-08-14 |
Attorney, Agent or Firm:
JIN Shunji (JP)
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