Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/092680
Kind Code:
A1
Abstract:
In this semiconductor device, a first gate electrode (15a) is disposed via a first gate insulation film (14a) on a first trench (13a), a second gate electrode (15b) is disposed via a second gate insulation film (14b) on a second trench (13b), a gate voltage is applied to the first gate electrode (15a), and the second gate electrode (15b) is electrically connected to a first electrode (19). In addition, a second capacitance per unit area of the entire portion, of the second gate insulating film (14b), that is formed on an area in contact with a drift layer (11) on a side surface of the second trench (13b) is set to be not greater than a first capacitance per unit area of a portion, of the first gate insulation film (14a), that is formed on an area in contact with a base layer (12) on a side surface of the first trench (13a), and the second capacitance of at least a portion is set to be smaller than the first capacitance.
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Inventors:
SUMITOMO MASAKIYO (JP)
Application Number:
PCT/JP2017/040490
Publication Date:
May 24, 2018
Filing Date:
November 09, 2017
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/739
Foreign References:
| JP2006245477A | 2006-09-14 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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