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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/117238
Kind Code:
A1
Abstract:
A semiconductor device is provided in which a trench (5) is connected continuously to reach both a main cell region and a sense cell region, and a shield electrode (7) and a gate electrode layer (8) are continuously formed to reach both the main cell region and the sense cell region. In this way, the need to provide a contact for the shield electrode (7) between the main cell region and the sense cell region is eliminated, thereby enabling the main cell region and the sense cell region to be disposed much closer to each other.

Inventors:
YAMAMOTO TSUYOSHI (JP)
GODA KENTA (JP)
HARADA SHUNSUKE (JP)
NAKAYAMA YOSHIAKI (JP)
Application Number:
PCT/JP2017/046010
Publication Date:
June 28, 2018
Filing Date:
December 21, 2017
Export Citation:
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Assignee:
DENSO CORP (JP)
International Classes:
H01L21/336; H01L29/78
Foreign References:
JP2009182113A2009-08-13
US20140217495A12014-08-07
JP2007529115A2007-10-18
US20130146970A12013-06-13
US20160071972A12016-03-10
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
Download PDF:
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