Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/022205
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a drift layer (13) of a first conductivity type; a channel layer (14) of the first conductivity type, which is arranged on the drift layer (13); a source layer (15) of the first conductivity type, which is formed in a surface layer part of the channel layer (14); a gate layer (16) of a second conductivity type, which is formed in the channel layer (15); a body layer (17) of the second conductivity type, which is formed in the channel layer (15); a drain layer (11) which is arranged so as to be opposite to the source layer (15), with the drift layer (13) being interposed therebetween; a gate wiring line (19) which is electrically connected to the gate layer (16); a first electrode (21) which is electrically connected to the source layer (15) and the body layer (17); and a second electrode (22) which is electrically connected to the drain layer (11). This semiconductor device is configured such that the electric field intensity on the bottom side of the body layer (17) is higher than the electric field intensity on the bottom side of the gate layer (16).
Inventors:
KONO KENJI (JP)
Application Number:
PCT/JP2018/028142
Publication Date:
January 31, 2019
Filing Date:
July 26, 2018
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L21/337; H01L21/338; H01L29/808; H01L29/812
Foreign References:
| JP2014220434A | 2014-11-20 | |||
| JP2005005385A | 2005-01-06 | |||
| JP2010034381A | 2010-02-12 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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