Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/022206
Kind Code:
A1
Abstract:
The present invention comprises: a JFET (10); a MOSFET (20); and a JFET adjustment resistor (42) disposed between a gate electrode (13) of the JFET (10) and a source electrode (21) of the MOSFET (20). The JFET (10) and the MOSFET (20) are configured so that a source electrode (11) of the JFET (10) and a drain electrode (22) of the MOSFET (20) are electrically connected and cascode-connected. The JFET adjustment resistor (42) includes a first resistor circuit (421) for a switch-on operation and a second resistor circuit (422) for a switch-off operation.
Inventors:
KONO KENJI (JP)
Application Number:
PCT/JP2018/028143
Publication Date:
January 31, 2019
Filing Date:
July 26, 2018
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L21/337; H01L21/338; H01L29/06; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| WO2015166523A1 | 2015-11-05 |
Foreign References:
| JP2012522410A | 2012-09-20 | |||
| JP2017051049A | 2017-03-09 | |||
| JP2014220434A | 2014-11-20 | |||
| JP2013153079A | 2013-08-08 | |||
| JP2015015301A | 2015-01-22 | |||
| JP2015056564A | 2015-03-23 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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