Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/065463
Kind Code:
A1
Abstract:
The present invention comprises a strongly correlated material layer (9) provided between a source electrode (11) and a gate electrode (8) of a vertical MOSFET. This makes it possible, when heat generation occurs in an element during short circuiting, to cause the strongly correlated material layer (9) to function as a conductor and cause the gate and the source of the vertical MOSFET to electrically connect. Therefore, the voltage of the gate electrode (8) can be reduced and a short-circuit current flowing in the vertical MOSFET can be cut off, making it possible to minimize the power in the vertical MOSFET.
Inventors:
MITANI SHUHEI (JP)
IKEGAMI KATSUYA (JP)
SOEJIMA NARUMASA (JP)
IKEGAMI KATSUYA (JP)
SOEJIMA NARUMASA (JP)
Application Number:
PCT/JP2018/034875
Publication Date:
April 04, 2019
Filing Date:
September 20, 2018
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12
Domestic Patent References:
| WO2016114057A1 | 2016-07-21 | |||
| WO2018078894A1 | 2018-05-03 |
Foreign References:
| JP2017507489A | 2017-03-16 | |||
| JP2001177093A | 2001-06-29 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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