Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/065462
Kind Code:
A1
Abstract:
A thermally oxidized film (10a) formed by thermally oxidizing part of a gate electrode (8) is used as a first inter-layer insulation film to effect insulation between the gate electrode (8) and a source electrode (12). The thermally oxidized film configured by thermally oxidizing part of the gate electrode (8) does not assume a form that protrudes far from a SiC surface, and therefore cracking due to stress that accompanies temperature changes, etc., does not readily occur. Therefore, it is possible to ensure insulation and separation between gate and source. In addition, a second inter-layer insulation film (11) is formed such that the portion above a contact region of a source region (4) and a base region (3) is removed by etching. Therefore, it is possible to precisely carry out contact of the source electrode (12) on both sides sandwiching the gate electrode (8).
Inventors:
MITANI SHUHEI (JP)
KUMITA MASAHIRO (JP)
SOEJIMA NARUMASA (JP)
KUMITA MASAHIRO (JP)
SOEJIMA NARUMASA (JP)
Application Number:
PCT/JP2018/034870
Publication Date:
April 04, 2019
Filing Date:
September 20, 2018
Export Citation:
Assignee:
DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)
TOYOTA MOTOR CO LTD (JP)
International Classes:
H01L29/78; H01L21/316; H01L21/336; H01L29/12
Domestic Patent References:
| WO2012144271A1 | 2012-10-26 | |||
| WO2009122486A1 | 2009-10-08 |
Foreign References:
| JP2016119392A | 2016-06-30 | |||
| JP2007150142A | 2007-06-14 | |||
| JPH09129877A | 1997-05-16 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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