Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/193750
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a device substrate (1) in which a semiconductor circuit including a transistor that amplifies a high-frequency wave is formed; a cap substrate (2); and a sealing frame (30) of a conductor which forms and air-tightly seals a space surrounding an area, in which the semiconductor circuit is formed, between the device substrate (1) and the cap substrate (2), wherein the sealing frame (30) is configured to be operated as a member of a high-frequency circuit.
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Inventors:
MIWA SHINICHI (JP)
Application Number:
PCT/JP2018/014749
Publication Date:
October 10, 2019
Filing Date:
April 06, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/02
Foreign References:
| JP2007027762A | 2007-02-01 | |||
| JP2007067400A | 2007-03-15 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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