Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/031551
Kind Code:
A1
Abstract:
[Problem] To improve drawability of positive holes during turn on in IGBT, etc. [Solution] A semiconductor device comprising a semiconductor substrate provided with a transistor part, wherein provided is a semiconductor device for which the semiconductor substrate in the transistor part comprises: a first electrically conductive type drift region; a first electrically conductive type storage region that is provided between the drift region and the top surface of the semiconductor substrate, and that has a higher doping concentration than the drift region; a second electrically conductive type collector region that is provided between the bottom surface of the semiconductor substrate and the drift region; and a plurality of gate trench parts and a plurality of dummy trench parts that are provided deeper than the storage region from the top surface of the semiconductor substrate, that are provided stretching in a stretching direction set in advance on the top surface of the semiconductor substrate, and that are arrayed in an array direction orthogonal to the stretching direction, and the transistor part has: a first region including the gate trench parts; and a second region for which the number of dummy trench parts placed within a unit length in the array direction is greater than for the first region.
Inventors:
OZAKI DAISUKE (JP)
KANETAKE AKINORI (JP)
SHIRAKAWA TOHRU (JP)
SAKURAI YOSUKE (JP)
KANETAKE AKINORI (JP)
SHIRAKAWA TOHRU (JP)
SAKURAI YOSUKE (JP)
Application Number:
PCT/JP2019/026181
Publication Date:
February 13, 2020
Filing Date:
July 01, 2019
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/739; H01L21/8234; H01L27/06; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| WO2011111500A1 | 2011-09-15 | |||
| WO2017033315A1 | 2017-03-02 |
Foreign References:
| JP2016174029A | 2016-09-29 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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