Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/202430
Kind Code:
A1
Abstract:
An IGBT (2), a diode (3), and a well region (4) are provided on a semiconductor substrate (1). The IGBT (2) has a trench gate (6) provided on the first main surface of the semiconductor substrate (1). The diode (3) has a p-type anode layer (19) provided on the first main surface of the semiconductor substrate (1). The well region (4) has a p-type well layer (21) that is provided on the first main surface of the semiconductor substrate (1), has a higher concentration than the p-type anode layer (19), and is deeper than the trench gate (6). The end of the trench gate (6) is provided in the well region (4) and is surrounded by the p-type well layer (21). The diode (3) is provided outside the semiconductor substrate (1) with respect to the IGBT (2). The well region (4) is provided outside the semiconductor substrate (1) with respect to the diode (3).
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Inventors:
KIMURA KOTA (JP)
Application Number:
PCT/JP2019/014449
Publication Date:
October 08, 2020
Filing Date:
April 01, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/739
Foreign References:
| JP2012033897A | 2012-02-16 | |||
| JP2013026534A | 2013-02-04 | |||
| JP2017224685A | 2017-12-21 | |||
| JP2018186111A | 2018-11-22 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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