Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/217400
Kind Code:
A1
Abstract:
This semiconductor device comprises: a first fin and a second fin which protrude from a substrate; a first transistor including the first fin; a second transistor over the first transistor; and a first power supply line electrically connected to the first fin via the second fin. The first transistor includes first and second impurity regions formed in the first fin, and a first gate insulating film formed on the first fin. The second transistor includes: a first semiconductor region formed over the first fin; a third impurity region formed in the first semiconductor region and positioned over the first impurity region; a fourth impurity region formed in the first semiconductor region and positioned over the second impurity region; and a second gate insulating film formed on the first semiconductor region. The first transistor and the second transistor have a common gate.
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Inventors:
TAKENO HIROTAKA (JP)
OKAMOTO ATSUSHI (JP)
WANG WENZHEN (JP)
OKAMOTO ATSUSHI (JP)
WANG WENZHEN (JP)
Application Number:
PCT/JP2019/017697
Publication Date:
October 29, 2020
Filing Date:
April 25, 2019
Export Citation:
Assignee:
SOCIONEXT INC (JP)
International Classes:
H01L21/82; H01L21/8238; H01L27/092
Domestic Patent References:
| WO2016207930A1 | 2016-12-29 | |||
| WO2017208888A1 | 2017-12-07 |
Foreign References:
| JP2007013156A | 2007-01-18 | |||
| JP2018190760A | 2018-11-29 | |||
| JP2012190998A | 2012-10-04 | |||
| JP2015073039A | 2015-04-16 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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