Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/245695
Kind Code:
A1
Abstract:
Provided is a small semiconductor device. This semiconductor device has a first layer, a second layer, and a third layer that are formed on a substrate. A first transistor included in the first layer has a first semiconductor layer that contains Si. A second transistor included in the second layer contains a second semiconductor layer that contains Ga. A third transistor included in the third layer has a third semiconductor layer that contains In and/or Zn. The first semiconductor layer of the first transistor is formed by using the substrate. The second semiconductor layer of the second transistor is formed by using a crystal obtained through crystal growth on the substrate. The third semiconductor layer of the third transistor is formed above the first semiconductor layer and the second semiconductor layer.
Inventors:
KUNITAKE HITOSHI (JP)
IKEDA TAKAYUKI (JP)
FUKUTOME TAKAHIRO
IKEDA TAKAYUKI (JP)
FUKUTOME TAKAHIRO
Application Number:
PCT/IB2020/054923
Publication Date:
December 10, 2020
Filing Date:
May 25, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108
Foreign References:
| JP2015188071A | 2015-10-29 | |||
| JP2017501562A | 2017-01-12 | |||
| JP2015144284A | 2015-08-06 |
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