Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/009857
Kind Code:
A1
Abstract:
Provided is a semiconductor device capable of reducing deterioration caused by temperature change. The semiconductor device 1 has: at least one semiconductor element 21 having a power supply-side electrode 211 to which current is input and a load-side electrode 212 that is formed on a surface parallel to the power supply-side electrode 211 and from which current is output; a first conductive section 22 fixed to and electrically connected to either the power supply-side electrode 211 or the load-side electrode 212 in the semiconductor element 21; a second conductive section 23 fixed to and electrically connected to the other out of the power supply-side electrode 211 and the load-side electrode 212 in the semiconductor element 21 and arranged in parallel to the first conductive section 22; and a cooling unit 4 fixed, via a buffering section 6, to at least either the first conductive section 22 or the second conductive section 23.
Inventors:
WATANABE NAOTAKE (JP)
ITO HIROAKI (JP)
ICHIKURA YUTA (JP)
TADA NOBUMITSU (JP)
TASHIRO SHOTA (JP)
SEKIYA HIROKI (JP)
HISAZATO YUUJI (JP)
MIZUTANI MAMI (JP)
IIO NAOTAKA (JP)
ITO HIROAKI (JP)
ICHIKURA YUTA (JP)
TADA NOBUMITSU (JP)
TASHIRO SHOTA (JP)
SEKIYA HIROKI (JP)
HISAZATO YUUJI (JP)
MIZUTANI MAMI (JP)
IIO NAOTAKA (JP)
Application Number:
PCT/JP2019/027987
Publication Date:
January 21, 2021
Filing Date:
July 16, 2019
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORP (JP)
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORP (JP)
International Classes:
H01L25/07; H01L25/18
Foreign References:
| JP2019050301A | 2019-03-28 | |||
| JP2010182831A | 2010-08-19 | |||
| JP2019021684A | 2019-02-07 |
Attorney, Agent or Firm:
KIUCHI Mitsuharu et al. (JP)
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