Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/053450
Kind Code:
A1
Abstract:
Provided is a semiconductor device in which miniaturization and high integration are possible. The present invention has: a first insulator; a first oxide on the first insulator; a second oxide on the first oxide; a first conductor, second conductor, third oxide, fourth oxide, and second insulator on the second oxide; a third insulator on the first conductor, the second conductor, the third oxide, and the fourth oxide; a fourth insulator on the second insulator; and a third conductor on the fourth insulator, the second insulator being positioned between the first conductor and the second conductor, the third oxide being positioned between the first conductor and the second insulator, the fourth oxide being positioned between the second conductor and the second insulator, the film thickness of the third oxide between the first conductor and the second insulator being 3-8 nm inclusive, and the film thickness of the fourth oxide between the second conductor and the second insulator being 3-8 nm inclusive.
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Inventors:
KUNITAKE HITOSHI (JP)
YANAGISAWA YUICHI (JP)
MIZUKAMI SHOTA
TSUDA KAZUKI (JP)
BABA HARUYUKI (JP)
YAMAZAKI SHUNPEI (JP)
YANAGISAWA YUICHI (JP)
MIZUKAMI SHOTA
TSUDA KAZUKI (JP)
BABA HARUYUKI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2020/058299
Publication Date:
March 25, 2021
Filing Date:
September 07, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Domestic Patent References:
| WO2016166635A1 | 2016-10-20 |
Foreign References:
| JP2010114432A | 2010-05-20 | |||
| JP2017045989A | 2017-03-02 |
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