Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/167893
Kind Code:
A1
Abstract:
The present invention provides a novel semiconductor device. This semiconductor device comprises a first layer, a second layer on the first layer, and a third layer on the second layer. The first layer comprises a functional circuit including a first transistor, the second layer comprises a plurality of pixel circuits each including a second transistor, and the third layer comprises a plurality of light-emitting elements. One of the plurality of pixel circuits is electrically connected with one of the plurality of light-emitting elements, the functional circuit has a function of controlling the operation of the pixel circuits, and each pixel circuit has a function of controlling the light emission luminance of the light-emitting element.
Inventors:
YAMAZAKI SHUNPEI (JP)
IKEDA TAKAYUKI (JP)
ONUKI TATSUYA (JP)
IKEDA TAKAYUKI (JP)
ONUKI TATSUYA (JP)
Application Number:
PCT/IB2022/050612
Publication Date:
August 11, 2022
Filing Date:
January 25, 2022
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G09F9/30; G09F9/00; G09G3/20; G09G3/3225; H01L21/336; H01L21/8234; H01L21/8242; H01L27/00; H01L27/06; H01L27/088; H01L27/108; H01L27/1156; H01L27/32; H01L29/786; H01L29/788; H01L29/792; H01L51/50; H05B33/02; H05B33/12
Domestic Patent References:
| WO2020039291A1 | 2020-02-27 |
Foreign References:
| US20210005693A1 | 2021-01-07 | |||
| JP2020101829A | 2020-07-02 | |||
| JP2002175056A | 2002-06-21 | |||
| JP2000353811A | 2000-12-19 | |||
| JP2018195747A | 2018-12-06 |
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