Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/161757
Kind Code:
A1
Abstract:
Provided is a semiconductor device that enables miniaturization and high integration. The semiconductor device has: a first transistor that includes a first conductor, a first insulator, a first metal oxide, a second insulator, and a second conductor layered in this order from the bottom, and a third conductor and a fourth conductor covering part of the upper surface and the sides surfaces of the first metal oxide; a second transistor that includes a fifth conductor, a first insulator, a second metal oxide, a third insulator, and a sixth conductor layered in this order from the bottom, and a seventh conductor and an eighth conductor covering part of the upper surface and the side surfaces of the second metal oxide; and a third transistor that includes a ninth conductor, a first insulator, a second metal oxide, a fourth insulator, a tenth conductor, and an eighth conductor layered in this order from the bottom, and an eleventh conductor covering part of the upper surface and the side surfaces of the second metal oxide. One of the electrodes of a capacitor containing a material capable of exhibiting ferroelectric properties is electrically connected with the third conductor and the sixth conductor.
Inventors:
KUNITAKE HITOSHI (JP)
ISAKA FUMITO (JP)
ONUKI TATSUYA (JP)
YAMAZAKI SHUNPEI (JP)
ISAKA FUMITO (JP)
ONUKI TATSUYA (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/051253
Publication Date:
August 31, 2023
Filing Date:
February 13, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B41/70; G11C11/22; H01L21/336; H01L29/788; H01L29/792
Domestic Patent References:
| WO2021229373A1 | 2021-11-18 |
Foreign References:
| JP2015222807A | 2015-12-10 | |||
| JP2019029666A | 2019-02-21 |
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