Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/162735
Kind Code:
A1
Abstract:
A semiconductor device (1) is a vertical field effect transistor (10) including: a first gate trench (17) extending in a first direction and a second gate trench (27) formed deeper than the first gate trench (17); a first gate insulating film (16) and a first gate conductor (15) formed inside the first gate trench (17); and a second gate insulating film (26) and a second gate conductor (25) formed inside the second gate trench (27). The first gate conductor (15) and the second gate conductor (25) have the same potential. When the number of first gate trenches (17) is defined as n, the number of second gate trenches (27) is 2 to n+1 inclusive. In a second direction orthogonal to the first direction parallel to an upper surface of a low concentration impurity layer (33), the second gate trench (27) is installed at the endmost point of a region in which the first gate trench (17) and the second gate trench (27) are installed.
Inventors:
NAKAMURA HIRONAO
OKAWA RYOSUKE
YASUDA EIJI
OKAWA RYOSUKE
YASUDA EIJI
Application Number:
PCT/JP2023/004664
Publication Date:
August 31, 2023
Filing Date:
February 10, 2023
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
International Classes:
H01L29/78; H01L21/336
Domestic Patent References:
| WO2018123799A1 | 2018-07-05 |
Foreign References:
| JP2019186318A | 2019-10-24 | |||
| JP2018182240A | 2018-11-15 | |||
| JP2013214696A | 2013-10-17 | |||
| US20140264432A1 | 2014-09-18 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
Download PDF: