Title:
SEMICONDUCTOR DIODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/193342
Kind Code:
A1
Abstract:
The present application discloses a semiconductor diode, comprising an n-type substrate; an n-type drift region located on the n-type substrate; a p-type anode region located on the n-type drift region; and a plurality of n-type doped regions located between the p-type anode region and the n-type drift region and transversely arranged at intervals.
Inventors:
WANG PENGFEI (CN)
WANG RUI (CN)
LIN MINZHI (CN)
LIU LEI (CN)
GONG YI (CN)
WANG RUI (CN)
LIN MINZHI (CN)
LIU LEI (CN)
GONG YI (CN)
Application Number:
PCT/CN2022/098868
Publication Date:
October 12, 2023
Filing Date:
June 15, 2022
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/868; H01L29/06
Foreign References:
| CN112687749A | 2021-04-20 | |||
| CN214753780U | 2021-11-16 | |||
| US20140070369A1 | 2014-03-13 | |||
| CN102593154A | 2012-07-18 | |||
| JP2003152198A | 2003-05-23 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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