SEMICONDUCTOR ELEMENT, SEMICONDUCTOR LASER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

WIPO Patent Application WO/2018/083896

A1

[Problem] The present invention addresses the problem of providing: a semiconductor element wherein electrical connection between a transparent conductive layer and a semiconductor layer can be sufficiently ensured; a semiconductor laser; and a method for manufacturing the semiconductor element. [Solution] A semiconductor element relating to the present technology is provided with a first semiconductor layer, a second semiconductor layer, an active layer, and a transparent conductive layer. The first semiconductor layer has a first conductivity type, and has a stripe-shaped ridge that is formed on the surface. When the width of a ridge surface, on which the transparent conductive layer is formed, said width being in the direction orthogonal to the extending direction of the ridge, is set as a first width, and a transparent conductive layer surface on the ridge side, said width being in the above-mentioned direction, is set as a second width, the second width is 0.99-1.0 times the first width. When the transparent conductive layer surface on the reverse side of the ridge, said width being in the above-mentioned direction, is set as a third width, the third width is 0.96-1.0 times the second width, and in the range of the third width, the transparent conductive layer has a uniform thickness within a range of 90-110 %.

MURAYAMA MASAHIRO (JP)

PCT/JP2017/033534

May 11, 2018

September 15, 2017

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SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

H01S5/22; H01S5/042

WO2012127778A1

2012-09-27

JPH10209559A	1998-08-07
JP2004281431A	2004-10-07
JP2011222973A	2011-11-04
JP2004260152A	2004-09-16
JP2013102043A	2013-05-23
US8971370B1	2015-03-03

OMORI, Junichi (JP)

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