Title:
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/197088
Kind Code:
A1
Abstract:
Disclosed are a semiconductor element and a manufacturing method therefor. The semiconductor element comprises a substrate, a semiconductor stack, an insulating structure, and an electrode. The semiconductor stack is disposed on the substrate and comprises a two-dimensional electron gas region. The insulating structure is disposed on the semiconductor stack and comprises a first insulating layer and a second insulating layer. The first insulating layer comprises a first opening, and the first opening exposes a first inner side wall of the first insulating layer. The second insulating layer is disposed on the first insulating layer and covers the first inner side wall of the first insulating layer. The second insulating layer comprises a second opening located in the first opening and exposing a second inner side wall of the second insulating layer. The second insulating layer comprises a stepped contour, and the step edge of the stepped contour coincides with the second inner side wall. The electrode is disposed on the insulating structure and located in the second opening.
Inventors:
CHEN CHIH-HAO (CN)
SHEN YI-RU (CN)
SHEN YI-RU (CN)
Application Number:
PCT/CN2022/000065
Publication Date:
October 19, 2023
Filing Date:
April 11, 2022
Export Citation:
Assignee:
GANRICH SEMICONDUCTOR CORP (CN)
International Classes:
H01L29/778; H01L21/311; H01L21/335; H01L29/40; H01L21/316; H01L29/06; H01L29/423
Foreign References:
| US20200027956A1 | 2020-01-23 | |||
| JP2018006481A | 2018-01-11 | |||
| CN207303109U | 2018-05-01 | |||
| US20180204915A1 | 2018-07-19 |
Attorney, Agent or Firm:
KELONG INTERNATIONAL INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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