Title:
SEMICONDUCTOR FILM
Document Type and Number:
WIPO Patent Application WO/2020/261355
Kind Code:
A1
Abstract:
This semiconductor film: has a corundum crystal structure comprising α–Ga2O3 or an α–Ga2O3-based solid solution; has a film surface area of at least 19 cm2; and has a minimum film thickness that is 50%–95% of the maximum film thickness.
Inventors:
YOSHIKAWA JUN (JP)
WATANABE MORIMICHI (JP)
FUKUI HIROSHI (JP)
WATANABE MORIMICHI (JP)
FUKUI HIROSHI (JP)
Application Number:
PCT/JP2019/025042
Publication Date:
December 30, 2020
Filing Date:
June 25, 2019
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/16; C23C16/40; C30B25/16; H01L21/365; H01L21/368
Foreign References:
| JP2016146442A | 2016-08-12 | |||
| JP2016027636A | 2016-02-18 | |||
| JP2018002544A | 2018-01-11 |
Other References:
KIM, KYOUNG-HO ET AL.: "Growth of 2-Inch a -Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 8, no. 7, 20 March 2019 (2019-03-20), pages Q3165 - Q3170, DOI: 10. 1149/2. 0301907jss
HA MINH-TAN, KIM KYOUNG-HO, KWON YONG-JIN, KIM CHEOL-JIN, JEONG SEONG-MIN, BAE SI-YOUNG: "Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 8, no. 7, 19 April 2019 (2019-04-19), pages Q3206 - Q3212, XP055779625, DOI: 10. 1149/2. 0381907jss
HA MINH-TAN, KIM KYOUNG-HO, KWON YONG-JIN, KIM CHEOL-JIN, JEONG SEONG-MIN, BAE SI-YOUNG: "Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 8, no. 7, 19 April 2019 (2019-04-19), pages Q3206 - Q3212, XP055779625, DOI: 10. 1149/2. 0381907jss
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
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