Title:
SEMICONDUCTOR IMPURITY LIQUID SOURCE, METHOD FOR MANUFACTURING SEMICONDUCTOR IMPURITY LIQUID SOURCE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/150548
Kind Code:
A1
Abstract:
A semiconductor impurity liquid source includes: a compound that contains an impurity; an organic solvent that dissolves the compound; a thickening agent that is dissolved in the organic solvent and imparts viscosity to the liquid source; and an inorganic powder with a diameter larger than the impurity. The thickening agent adjusts the distribution of the impurity on an application surface of a semiconductor substrate by adjusting the gap between adjacent inorganic powder particles using viscosity when the liquid source is applied to the application surface, and maintains the distribution of the impurity by precipitating between adjacent inorganic powder particles as a result of being heated to a first temperature. The inorganic powder adjusts the distribution of gaps between semiconductor substrates, and when the joined semiconductor substrates are exposed to delamination liquid after heating the impurity to a second temperature, the delamination liquid permeates the space between the semiconductor substrates by the gap between the semiconductor substrates being maintained.
Inventors:
SAITO TOMOYA (JP)
Application Number:
PCT/JP2018/003557
Publication Date:
August 08, 2019
Filing Date:
February 02, 2018
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L21/225
Domestic Patent References:
| WO2012067118A1 | 2012-05-24 |
Foreign References:
| JPS5618417A | 1981-02-21 | |||
| JPH11176764A | 1999-07-02 | |||
| JPS5484474A | 1979-07-05 | |||
| JP2014509076A | 2014-04-10 | |||
| JP2009194012A | 2009-08-27 |
Attorney, Agent or Firm:
NAGAI Hiroshi et al. (JP)
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