Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/039479
Kind Code:
A1
Abstract:
A semiconductor laser device (100) emits laser light. The semiconductor laser device (100) is provided with: a substrate (110); an n-type semiconductor layer (121) disposed over the substrate (110); a light emitting layer (122) disposed over the n-type semiconductor layer (121); a p-type semiconductor layer (123) disposed over the light emitting layer (122); and one or more p-electrodes (130) disposed over the p-type semiconductor layer (123). One or more grooves (180) reaching from an upper surface of the p-type semiconductor layer (123) to a lower surface of the light emitting layer (122) and extending in a laser light resonance direction are formed. Compared to a non-injection region length which is the distance from an exit end face (101) from which laser light exits to the one or more p-electrodes (130), a left-over length which is the distance from the exit end face (101) to a portion of each of the one or more grooves (180) closest to the one or more p-electrodes (130) is longer.
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Inventors:
NOZAKI SHINICHIRO
Application Number:
PCT/JP2020/031036
Publication Date:
March 04, 2021
Filing Date:
August 17, 2020
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01S5/16; H01S5/22; H01S5/40
Foreign References:
| JP2015041730A | 2015-03-02 | |||
| JP2011054677A | 2011-03-17 | |||
| JP2010074131A | 2010-04-02 | |||
| JPH07307522A | 1995-11-21 | |||
| US20020097765A1 | 2002-07-25 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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