Title:
SEMICONDUCTOR LASER AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/100608
Kind Code:
A1
Abstract:
A semiconductor laser according to an embodiment of the present disclosure includes a semiconductor stacked unit. The semiconductor stacked unit includes a first semiconductor layer of the first conductivity type, a second semiconductor layer of the second conductivity type which is stacked on the first semiconductor layer and provided with a band-shaped ridge portion, and an active layer. The semiconductor stacked unit further has an impurity region, in which the concentration of impurities of the second conductivity type is higher than the concentration of impurities of the second conductivity type in a region of the second semiconductor layer facing the ridge portion, and the impurity region is at least a part of a region not facing the ridge portion and positioned more deeply than at least the active layer.
Inventors:
TOKUDA KOTA (JP)
SATOU SHINYA (JP)
SATOU SHINYA (JP)
Application Number:
PCT/JP2019/042758
Publication Date:
May 22, 2020
Filing Date:
October 31, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01S5/22; H01S5/343
Domestic Patent References:
| WO2014126164A1 | 2014-08-21 |
Foreign References:
| JP2005175450A | 2005-06-30 | |||
| US6165811A | 2000-12-26 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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