Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2019/230712
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor laser that allows a frequency response characteristic to be further improved. A semiconductor laser 1 is provided with: an active layer 102 constituting at least a part of a resonator which excites TE mode light and TM mode light and guides waves of the TE mode light and the TM mode light; and a diffraction grating 103 as a frequency difference setting structure for setting the difference in an oscillation frequency between the TE mode light and the TM mode light higher than the relaxation vibration frequency.
Inventors:
DIAMANTOPOULOS NIKOLAOS-PANTELEIMON (JP)
KAKITSUKA TAKAAKI (JP)
MATSUO SHINJI (JP)
KAKITSUKA TAKAAKI (JP)
MATSUO SHINJI (JP)
Application Number:
PCT/JP2019/021066
Publication Date:
December 05, 2019
Filing Date:
May 28, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/06; H01S5/12
Foreign References:
| JP2017022344A | 2017-01-26 | |||
| JP2008300804A | 2008-12-11 | |||
| JP2003115800A | 2003-04-18 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
Download PDF:
Previous Patent: ROBOT SYSTEM
Next Patent: DETECTION SYSTEM, CATHETER DEVICE, AND LASER CAUTERIZING DEVICE
Next Patent: DETECTION SYSTEM, CATHETER DEVICE, AND LASER CAUTERIZING DEVICE