Title:
SEMICONDUCTOR LIGHT AMPLIFYING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2011/062181
Kind Code:
A1
Abstract:
Provided is a semiconductor light amplifying element which makes it possible to obtain highly efficient, high-power light output characteristics. The semiconductor light amplifying element is provided with: an input-side light amplifying waveguide which has a first active core layer; and an output-side light amplifying waveguide which is connected to the input-side light amplifying waveguide and has a second active core layer having a greater width than the first active core layer. The specific refraction index difference between the first active core layer and a cladding section adjacent in the width direction of the first active core layer, and the specific refraction index difference between the second active core layer and the cladding section adjacent in the width direction of the second active core layer are set in such a way that the carrier density and the optical confinement coefficient in the first active core layer are higher than the carrier density and the optical confinement coefficient in the second active core layer.
Inventors:
HASEGAWA HIDEAKI (JP)
Application Number:
PCT/JP2010/070468
Publication Date:
May 26, 2011
Filing Date:
November 17, 2010
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD (JP)
HASEGAWA HIDEAKI (JP)
HASEGAWA HIDEAKI (JP)
International Classes:
H01S5/026; H01S5/227
Foreign References:
| JP2003069162A | 2003-03-07 | |||
| JP2002232083A | 2002-08-16 | |||
| JPH10341061A | 1998-12-22 | |||
| JPH05218594A | 1993-08-27 | |||
| JPH03228380A | 1991-10-09 | |||
| JPH08340147A | 1996-12-24 | |||
| JPH10512720A | 1998-12-02 | |||
| JP2005276904A | 2005-10-06 |
Attorney, Agent or Firm:
MATSUSHITA, MAKOTO (JP)
Matsushita δΊ® (JP)
Matsushita δΊ® (JP)
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