SEMICONDUCTOR LIGHT DETECTION ELEMENT - HAMAMATSU PHOTONICS KK

Title:

SEMICONDUCTOR LIGHT DETECTION ELEMENT

Document Type and Number:

WIPO Patent Application WO/2017/150616

Kind Code:

A1

Abstract:

A semiconductor light detection element SP1 is provided with a semiconductor substrate 1 which is a silicon substrate. The semiconductor substrate 1 has a second main surface 1b being a light incident surface, and a first main surface 1a that faces the second main surface 1b. In the semiconductor substrate 1, carriers are generated according to incident light. A plurality of protruding sections 10 are formed on the second main surface 1b. The protruding sections 10 have inclined surfaces 10a inclined with respect to the thickness direction of the semiconductor substrate 1. In the protruding sections 10, a 111 surface of the semiconductor substrate 1 is exposed as the inclined surfaces 10a. The height of the protruding sections 10 is 200 nm or more.

Inventors:

KASUYA TATSUKI (JP)
KAWAHARA TAKESHI (JP)
MIYAZAKI YASUHITO (JP)
MAETA KENTARO (JP)
SUZUKI HISANORI (JP)

Application Number:

PCT/JP2017/008120

Publication Date:

September 08, 2017

Filing Date:

March 01, 2017

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HAMAMATSU PHOTONICS KK (JP)

International Classes:

H01L31/10; H01L27/148

Foreign References:

JP2013033864A	2013-02-14
JPS6411556U	1989-01-20
JP2011222893A	2011-11-04
JPH05190887A	1993-07-30
JP2012216760A	2012-11-08
JP2015050223A	2015-03-16
JP2014220403A	2014-11-20
JP2015520939A	2015-07-23
US20150200216A1	2015-07-16
JP2000106453A	2000-04-11
US4277793A	1981-07-07

Other References: