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Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/283869
Kind Code:
A1
Abstract:
The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor light-emitting element and a light-emitting device. The semiconductor light-emitting element comprises a semiconductor stack. The semiconductor stack comprises: a first semiconductor layer having n-type doping; a second semiconductor layer located on the first semiconductor layer and having p-type doping, the second semiconductor layer comprising a first surface close to the first semiconductor layer and a second surface away from the first semiconductor layer; and an active layer located between the first semiconductor layer and the second semiconductor layer, the active layer comprising a third surface close to the first semiconductor layer and a fourth surface close to the second semiconductor layer. The semiconductor stack further comprises a hydrogen impurity. The concentration of the hydrogen impurity at least comprises a first peak value close to the active layer and a second peak value away from the active layer, the second peak value being greater than the first peak value. The light-emitting element of the present invention has a high brightness performance.

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Inventors:
WANG YU (CN)
LAN YUNG-LING (CN)
MA MINGBIN (CN)
TANG CHAO (CN)
ZHOU HONGMIN (CN)
DONG JINKUANG (CN)
LEE CHENG-HUNG (CN)
LING CHAN-CHAN (CN)
Application Number:
PCT/CN2021/106427
Publication Date:
January 19, 2023
Filing Date:
July 15, 2021
Export Citation:
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Assignee:
ANHUI SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/00
Foreign References:
CN1941442A2007-04-04
CN111403565A2020-07-10
CN108598224A2018-09-28
CN101069289A2007-11-07
US20040166599A12004-08-26
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