Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/163824
Kind Code:
A1
Abstract:
Provided is a semiconductor light-emitting element 10 comprising: an n-type cladding layer 24 made of an n-type AlGaN-based semiconductor material; an active layer 26; and a p-type semiconductor layer disposed on the active layer 26, wherein the active layer 26 comprises a planarizing layer (first planarizing layer 41) made of an AlGaN-based semiconductor material and disposed on the n-type cladding layer 24, a barrier layer (first barrier layer 40a) made of an AlGaN-based semiconductor material and disposed on the planarizing layer, and a well layer 36 made of an AlGaN-based semiconductor material and disposed on the barrier layer. The active layer 26 emits deep ultraviolet light having a wavelength of 360 nm or less, wherein the ground level of the conduction band of the planarizing layer (first planarizing layer 41) is lower than the ground level of the conduction band of the barrier layer (first barrier layer 40a), and higher than the ground level of the conduction band of the well layer 36.
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Inventors:
WADA MITSUGU (JP)
FUKAHORI SHINYA (JP)
FUKAHORI SHINYA (JP)
Application Number:
PCT/JP2018/006231
Publication Date:
September 13, 2018
Filing Date:
February 21, 2018
Export Citation:
Assignee:
NIKKISO CO LTD (JP)
International Classes:
H01L33/32; H01L33/06; H01L33/12
Foreign References:
| JP2014241397A | 2014-12-25 | |||
| JP2000156544A | 2000-06-06 | |||
| JP2008140917A | 2008-06-19 | |||
| JP2002100837A | 2002-04-05 | |||
| JP2013165261A | 2013-08-22 | |||
| JP2008251643A | 2008-10-16 | |||
| JP2015053531A | 2015-03-19 | |||
| US9196788B1 | 2015-11-24 | |||
| JP2008140917A | 2008-06-19 |
Other References:
See also references of EP 3595021A4
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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