Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/188318
Kind Code:
A1
Abstract:
A semiconductor light emitting element (10) according to the present invention is provided with: a first cladding layer (102); an active layer (104) of a single quantum well structure, which is arranged above the first cladding layer (102) and comprises a first barrier layer (104b) and a first well layer (104a) that contains In and GaN; a second cladding layer (107) which is arranged above the active layer (104); and a superlattice layer (200) which is arranged below the first cladding layer (102) and/or above the second cladding layer (107). The superlattice layer (200) has a structure wherein a plurality of second well layers (200a) which contain GaN and a plurality of second barrier layers (200b) which contain GaN and have an In composition ratio that is different from the In composition ratio of the second well layers (200a) are alternately stacked.
Inventors:
KANO TAKASHI
Application Number:
PCT/JP2019/010449
Publication Date:
October 03, 2019
Filing Date:
March 14, 2019
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01S5/343; H01L33/04; H01L33/32
Domestic Patent References:
| WO1998031055A1 | 1998-07-16 | |||
| WO1999046822A1 | 1999-09-16 |
Foreign References:
| KR20090058364A | 2009-06-09 | |||
| JP2006510234A | 2006-03-23 | |||
| JP2005507155A | 2005-03-10 | |||
| JP2003060315A | 2003-02-28 | |||
| JP2001021508A | 2001-01-26 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
Download PDF: