SEMICONDUCTOR MEMORY DEVICE

Title:

SEMICONDUCTOR MEMORY DEVICE

Document Type and Number:

WIPO Patent Application WO/2016/136604

Kind Code:

A1

Abstract:

In this semiconductor memory device (1), without using a conventional control circuit, voltage application from a memory gate electrode (G) to a word line can be shut off by a rectifier element (3) in accordance with a voltage value applied to the memory gate electrode (G) of a memory capacitor (4) and the word line thereof. Hence, conventional switching transistors and a conventional switch control circuit for causing the switching transistors to turn on and off are unnecessary, thereby enabling downsizing. In addition, in the semiconductor memory device (1), four anti-fuse memories (2a6, 2a7, 2a10, 2a11) adjacent to each other share a single bit line contact (BC15), and for example, four anti-fuse memories (2a3, 2a4, 2a7, 2a8) adjacent to each other share a single word line contact (WC12). Hence, in comparison with a case in which an individual bit line contact and an individual word line contact are respectively provided for each anti-fuse memory, downsizing of a whole device can be accomplished.

More Like This:

JP5622769	Semiconductor device
JPS58209157	SEMICONDUCTOR MEMORY CELL
JP2011029418	SEMICONDUCTOR MEMORY DEVICE

Inventors:

KASAI HIDEO (JP)
TANIGUCHI YASUHIRO (JP)
KAWASHIMA YASUHIKO (JP)
SAKURAI RYOTARO (JP)
SHINAGAWA YUTAKA (JP)
TOYA TATSURO (JP)
YAMAGUCHI TAKANORI (JP)
OWADA FUKUO (JP)
YOSHIDA SHINJI (JP)
HATADA TERUO (JP)
NODA TOSHIFUMI (JP)
KATO TAKAFUMI (JP)
MURATANI TETSUYA (JP)
OKUYAMA KOSUKE (JP)

Application Number:

PCT/JP2016/054809

Publication Date:

September 01, 2016

Filing Date:

February 19, 2016

Export Citation:

Click for automatic bibliography generation Help

Assignee:

FLOADIA CORP (JP)

International Classes:

H01L27/10

Foreign References:

JP2010087494A	2010-04-15
JP2008047702A	2008-02-28
JP2009147003A	2009-07-02
US20130051113A1	2013-02-28
JP5756971B1	2015-07-29

Other References: