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Title:
SEMICONDUCTOR MEMORY, SEMICONDUCTOR STORAGE MODULE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/086395
Kind Code:
A1
Abstract:
Provided are a semiconductor memory, a semiconductor storage module and a manufacturing method therefor. The semiconductor storage module comprises at least two storage chip sets (310, 510, 610, 710) sequentially stacked from bottom up; redistribution layers (403, 503, 603, 703) of two adjacent storage chip sets are electrically connected by means of interlayer conductive columns (407, 507, 607), and the redistribution layer (703) of the bottommost storage chip set is electrically connected to an external connection bump (908); each storage chip set comprises at least two storage chips (110, 210) which are sequentially stacked, and a composite insulating layer provided below the at least two storage chips; the at least two storage chips are packaged into an integral structure; the redistribution layer is provided in the composite insulating layer; intra-layer conductive columns (122, 222) of the at least two storage chips are staggered at a preset angle to respectively electrically connected to the redistribution layers. The semiconductor storage module achieves high capacity and integration density of semiconductor memories, and effectively improves the stacking efficiency of memories and reduces the stacking difficulty.

Inventors:
LU YUAN (CN)
CHEN FENG (CN)
Application Number:
PCT/CN2017/096756
Publication Date:
May 17, 2018
Filing Date:
August 10, 2017
Export Citation:
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Assignee:
NAT CENTER FOR ADVANCED PACKAGING CO LTD (CN)
International Classes:
H01L23/522; H01L23/52; H01L23/528
Domestic Patent References:
WO2009022991A12009-02-19
Foreign References:
CN106449590A2017-02-22
CN106653628A2017-05-10
TW200903755A2009-01-16
CN103296014A2013-09-11
CN105830212A2016-08-03
CN102890959A2013-01-23
CN1728378A2006-02-01
US20110068427A12011-03-24
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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