Title:
SEMICONDUCTOR MODULE PARALLEL CIRCUIT AND SEMICONDUCTOR MODULE CONNECTION BOARD
Document Type and Number:
WIPO Patent Application WO/2020/202272
Kind Code:
A1
Abstract:
This semiconductor module parallel circuit (1) is provided with a plurality of power semiconductor modules (10) and a multi-layer board (100) for connecting the plurality of power semiconductor modules (10). The power semiconductor modules (10) each have: a power semiconductor switching element; a first signal terminal connected to the gate potential of the power semiconductor switching element; and a second signal terminal connected to the source potential of the power semiconductor switching element. The multi-layer board (100) has: an external connection terminal; a first signal terminal connection pattern for connecting the first signal terminal of each of the power semiconductor modules (10); and a second signal terminal connection pattern for connecting the second signal terminal of each of the power semiconductor modules (10). The inductances of the gate wiring of the plurality of power semiconductor modules (10) from the external connection terminal to the first signal terminal connection pattern and from the second signal terminal connection pattern to the external connection terminal are equal to each other.
Inventors:
HAMAGUCHI RYOTA (JP)
NAKAYAMA YASUSHI (JP)
NAGAMITSU SHUICHI (JP)
NAKAYAMA YASUSHI (JP)
NAGAMITSU SHUICHI (JP)
Application Number:
PCT/JP2019/014076
Publication Date:
October 08, 2020
Filing Date:
March 29, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H02M1/08
Domestic Patent References:
| WO2019016929A1 | 2019-01-24 | |||
| WO2015136593A1 | 2015-09-17 |
Foreign References:
| JP2014027831A | 2014-02-06 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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