Title:
SEMICONDUCTOR OPTICAL DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2017/154404
Kind Code:
A1
Abstract:
Provided are: a semiconductor optical device having a reduced peeling rate of a wiring electrode section, while having a higher light extraction efficiency or light intake efficiency compared with conventional cases; and a method for manufacturing the semiconductor device.
The present invention discloses a semiconductor optical device wherein: a wiring electrode section 120 is provided on the front surface of a semiconductor layer 110, said front surface being to be a light emitting surface or a light receiving surface; the line width W1 of the wiring electrode section 120 is 2-5 μm; the wiring electrode section 120 has a metal layer 121 on the semiconductor layer 110, and a conductive hard film 122 on the metal layer 121; and the conductive hard film 122 has a hardness that is higher than that of the metal layer 121.
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Inventors:
TASAKI NORIO (JP)
Application Number:
PCT/JP2017/003190
Publication Date:
September 14, 2017
Filing Date:
January 30, 2017
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
International Classes:
H01L31/10; H01L33/38; H01L33/40
Domestic Patent References:
| WO2012120894A1 | 2012-09-13 |
Foreign References:
| JP2006245379A | 2006-09-14 | |||
| JP2015204333A | 2015-11-16 | |||
| JP2008288548A | 2008-11-27 | |||
| JP2011066453A | 2011-03-31 | |||
| JP2013211595A | 2013-10-10 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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