Title:
SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/193622
Kind Code:
A1
Abstract:
This semiconductor optical element has: a first clad layer; a second clad layer that has a ridge section (20) formed in a ridge shape; and optical confinement layers (2, 20) that are positioned between the first clad layer and the second clad layer, and that propagate light, wherein the ridge section (20) has a ridge lower section (5), a ridge intermediate section (6), and a ridge upper section (8) in this order from the side nearest the optical confinement layers (2, 20), and the width of the ridge intermediate section (6) in a cross-section perpendicular to an optical axis which is the propagation direction of light in the optical confinement layers (2, 20), is greater than the widths of the ridge lower section (5) and the ridge upper section (8).
Inventors:
YAMAGUCHI TSUTOMU (JP)
SAKUMA HITOSHI (JP)
ONOE KAZUYUKI (JP)
SAKUMA HITOSHI (JP)
ONOE KAZUYUKI (JP)
Application Number:
PCT/JP2018/014095
Publication Date:
October 10, 2019
Filing Date:
April 02, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/22; G02F1/01
Foreign References:
| JP2001274510A | 2001-10-05 | |||
| JPH09199791A | 1997-07-31 | |||
| JP2016184705A | 2016-10-20 | |||
| JP2010062273A | 2010-03-18 | |||
| US20140328363A1 | 2014-11-06 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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