SEMICONDUCTOR OPTICAL ELEMENT - NIPPON TELEGRAPH & TELEPHONE

Title:

SEMICONDUCTOR OPTICAL ELEMENT

Document Type and Number:

WIPO Patent Application WO/2019/208269

Kind Code:

A1

Abstract:

A first clad layer (101) of a first conductivity type and a second clad layer (103) of a second conductivity type are arranged on the upper side and lower side of a core (102) having a multiple quantum well structure and a third clad layer (104) of a first conductivity type and a fourth clad layer (105) of a second conductivity type are arranged on the right side and left side of the core. A first electrode (106) is formed to be connected to the third clad layer (104). A second electrode (107) is formed to be connected to the fourth clad layer (105). A reverse bias is applied between the first clad layer (101) and the third clad layer (103), and the second clad layer (102) and the fourth clad layer (104).

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Inventors:

KAKITSUKA TAKAAKI (JP)
MATSUO SHINJI (JP)

Application Number:

PCT/JP2019/016007

Publication Date:

October 31, 2019

Filing Date:

April 12, 2019

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE (JP)

International Classes:

G02F1/017; H01S5/026

Foreign References:

JP2001350127A	2001-12-21
JPH01118817A	1989-05-11
JPS61212823A	1986-09-20
US20150293383A1	2015-10-15
JPH1093196A	1998-04-10
JP2013246223A	2013-12-09

Attorney, Agent or Firm:

YAMAKAWA, Shigeki et al. (JP)

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