Title:
SEMICONDUCTOR POWER CONVERSION CIRCUIT, AND SEMICONDUCTOR DEVICE AND MOTOR DRIVE DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/039064
Kind Code:
A1
Abstract:
The present invention reduces reverse recovery loss of a semiconductor power conversion circuit which uses a MOSFET. A semiconductor power conversion circuit according to the present invention is configured such that: a first MOSFET 1m and a second MOSFET 2m are antiparallel-connected to a first diode 1d and a second diode 2d, respectively; the drain terminal of the first MOSFET 1m is connected to the first electrode side of a direct-current voltage source 4; the source terminal of the second MOSFET 2m is connected to the second electrode side of the direct-current voltage source 4; and the source terminal of the first MOSFET 1m and the drain terminal of the second MOSFET 2m are connected in common to a load inductor 5. The semiconductor power conversion circuit is provided with a gate drive mechanism 3 that, when the second MOSFET 2m which is connected in series with the first MOSFET 1m being in a reflux operation is to be switched from an OFF state to an ON state, performs gate driving by applying, to the gate electrode of the first MOSFET 1m, a voltage less than or equal to the maximum voltage applied to the gate electrode of the second MOSFET 2m, prior to a point in time at which a gate voltage at the second MOSFET 2m starts rising from a voltage in the OFF state.
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Inventors:
HARA KENJI (JP)
Application Number:
PCT/JP2018/023395
Publication Date:
February 28, 2019
Filing Date:
June 20, 2018
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H02M1/08
Foreign References:
| JP2015019489A | 2015-01-29 | |||
| JP2013125806A | 2013-06-24 | |||
| JP2014041852A | 2014-03-06 | |||
| JP2014027816A | 2014-02-06 | |||
| JP2002199699A | 2002-07-12 | |||
| JP2012143115A | 2012-07-26 | |||
| JP2013115933A | 2013-06-10 |
Attorney, Agent or Firm:
TODA Yuji (JP)
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