Title:
SEMICONDUCTOR STORAGE DEVICE, AND NEURAL NETWORK DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/129532
Kind Code:
A1
Abstract:
A semiconductor storage device according to one embodiment of the present invention comprises a substrate; a first storage element that is formed on the substrate and includes a first insulation film; and a second storage element that is formed on the substrate and includes a second insulation film having a film thickness that is 0.5-2 times the film thickness of the first insulation film, the power consumption during writing of the second storage element differing from the power consumption during writing of the first storage element.
Inventors:
KOBAYASHI TOSHIYUKI (JP)
Application Number:
PCT/JP2019/045605
Publication Date:
June 25, 2020
Filing Date:
November 21, 2019
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/11507; G06N3/063; G11C11/54; H01L21/336; H01L27/1159; H01L29/788; H01L29/792
Foreign References:
| JP2001102465A | 2001-04-13 | |||
| JP2018195767A | 2018-12-06 | |||
| JP2008235339A | 2008-10-02 | |||
| JP2004157756A | 2004-06-03 | |||
| JPH0668288A | 1994-03-11 | |||
| JP2007157982A | 2007-06-21 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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