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Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/246344
Kind Code:
A1
Abstract:
Transistors (N1, N5) that correspond to a drive transistor (PD1) are respectively formed at a cell upper part and a cell lower part. Transistors (N2, N6) that correspond to a drive transistor (PD2) are respectively formed at the cell upper part and the cell lower part. A transistor (P1) that corresponds to a load transistor (PU2) is formed at the cell lower part. A transistor (P2) that corresponds to a load transistor (PU1) is formed at the cell upper part.

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Inventors:
MORIWAKI SHINICHI (JP)
Application Number:
PCT/JP2020/020975
Publication Date:
December 10, 2020
Filing Date:
May 27, 2020
Export Citation:
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Assignee:
SOCIONEXT INC (JP)
International Classes:
H01L21/8238; G11C11/412; H01L21/8244; H01L27/092; H01L27/11
Domestic Patent References:
WO2014185085A12014-11-20
WO2014184933A12014-11-20
Foreign References:
JP2009295975A2009-12-17
JP2013143536A2013-07-22
JPH0661452A1994-03-04
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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