Title:
SEMICONDUCTOR STRUCTURE HAVING CONTINUOUS SPACERS AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/090425
Kind Code:
A1
Abstract:
Disclosed are a semiconductor structure having continuous spacers and manufacturing method therefor, and an electronic device having such a semiconductor structure. According to embodiments, the semiconductor structure may comprise: a substrate; a plurality of fins formed on the substrate and extending along a first direction; a plurality of gate stacks formed on the substrate and extending along a second direction crossing the first direction and dummy gates extending along the second direction and consisting of dielectrics, wherein the gate stacks intersect with at least one fin; and spacers formed at sidewalls of the gate stacks and sidewalls of the dummy gates, wherein the spacers of at least a first gate stack and a second gate stack that align with each other in the second direction or the spacers of at least one gate stack and at least one dummy gate that align with each other in the second direction extend integrally, and end portions of at least some of the fins are adjacent to the dummy gates and substantially align with inner walls of corresponding spacers.
Inventors:
ZHU HUILONG (US)
ZHONG HUICAI (CN)
ZHANG YANBO (CN)
ZHONG HUICAI (CN)
ZHANG YANBO (CN)
Application Number:
PCT/CN2016/111271
Publication Date:
May 24, 2018
Filing Date:
December 21, 2016
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L27/092; H01L21/8238
Foreign References:
| CN104681557A | 2015-06-03 | |||
| CN102208349A | 2011-10-05 | |||
| CN103887172A | 2014-06-25 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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