Title:
SEMICONDUCTOR STRUCTURE INCLUDING A MAGNETIC TUNNEL JUNCTION
Document Type and Number:
WIPO Patent Application WO2002009158
Kind Code:
A3
Abstract:
High quality epitaxial layers of ferromagnetic materials can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. This technique permits the fabrication of devices (96) employing ferromagnetic materials on a monocrystalline semiconductor substrate. In particular, magnetic tunnel junction devices comprising an insulator layer (32) and a second ferromagnetic layer (33) formed on first ferromagnetic layer (26) may be fabricated on silicon in accordance with this technique.
Inventors:
EISENBEISER KURT
FINDER JEFFREY M
FINDER JEFFREY M
Application Number:
PCT/US2001/022659
Publication Date:
July 18, 2002
Filing Date:
July 18, 2001
Export Citation:
Assignee:
MOTOROLA INC (US)
International Classes:
H01F10/32; H01L29/51; H01L43/08; (IPC1-7): H01F10/32; H01F41/30; H01L45/00; H01L27/24
Domestic Patent References:
| WO2001033585A1 | 2001-05-10 |
Foreign References:
| US5792569A | 1998-08-11 |
Other References:
OBATA T ET AL: "Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers", APPLIED PHYSICS LETTERS, vol. 74, no. 2, 11 January 1999 (1999-01-11), pages 290 - 292, XP000804874, ISSN: 0003-6951
PUST L ET AL: "Temperature dependence of the magnetization reversal in Co(fcc)-BN-Co(poly hcp) structures", JOURNAL OF APPLIED PHYSICS, vol. 85, no. 8, 15 April 1999 (1999-04-15), pages 5765 - 5767, XP000902206, ISSN: 0021-8979
MARTINEZ BOUBETA C ET AL: "Epitaxial metallic nanostructures on GaAs", SURFACE SCIENCE, vol. 482-485, June 2001 (2001-06-01), Elsevier, Netherlands, pages 910 - 915, XP002191521, ISSN: 0039-6028
PUST L ET AL: "Temperature dependence of the magnetization reversal in Co(fcc)-BN-Co(poly hcp) structures", JOURNAL OF APPLIED PHYSICS, vol. 85, no. 8, 15 April 1999 (1999-04-15), pages 5765 - 5767, XP000902206, ISSN: 0021-8979
MARTINEZ BOUBETA C ET AL: "Epitaxial metallic nanostructures on GaAs", SURFACE SCIENCE, vol. 482-485, June 2001 (2001-06-01), Elsevier, Netherlands, pages 910 - 915, XP002191521, ISSN: 0039-6028
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