Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/109580
Kind Code:
A1
Abstract:
A semiconductor structure and a manufacturing method therefor. The semiconductor structure (400) comprises: a substrate (41), comprising active regions (14) and shallow trench isolation regions (13) which are arranged at intervals; a plurality of isolation structures (15), located on a surface of the substrate (41); a plurality of recesses (42), located between the plurality of isolation structures (15), the bottom of each recess (42) having a first bevel (43), and the first bevel (43) being formed in the active region (14); and conductive plugs (11), located in the recesses (42). The structure can avoid forming an air gap in a polycrystalline silicon during the manufacturing process of a storage node contact plug structure.
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Inventors:
PING ER XUAN (CN)
ZHOU ZHEN (CN)
ZHOU ZHEN (CN)
Application Number:
PCT/CN2020/102476
Publication Date:
June 10, 2021
Filing Date:
July 16, 2020
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768; H01L23/528; H01L23/532; H01L27/108
Foreign References:
| CN208767278U | 2019-04-19 | |||
| KR20090072092A | 2009-07-02 | |||
| CN210926003U | 2020-07-03 | |||
| CN208655651U | 2019-03-26 |
Other References:
See also references of EP 3968371A4
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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